Samsung Electronics has made history by becoming the first manufacturer to develop the industry’s groundbreaking 36GB HBM3E 12H DRAM. This innovative development boasts an all-time high bandwidth of up to 1,280 gigabytes per second, coupled with an industry-leading capacity of 36 gigabytes. Significantly, both these aspects have seen an improvement of over 50% compared to the 8-stack HBM3 8H.
The groundbreaking 36GB HBM3E 12H introduces advanced thermal compression non-conductive film technology, enabling the 12-layer products to maintain the same height specification as 8-layer ones, meeting current HBM package requirements. This technological advancement is expected to bring additional benefits, especially when considering higher stacks.
In the process, Samsung Electronics has continued to reduce the thickness of its NCF material, achieving the industry’s smallest gap between chips at seven micrometers (µm) and eliminating voids between layers. These efforts result in an enhanced vertical density, exceeding 20% when compared to its HBM3 8H product.
The HBM3E 12H is poised to be an optimal solution for future systems requiring more memory. Its higher performance and capacity empower customers to manage resources more flexibly. Samsung has already commenced sampling its HBM3E 12H DRAM to customers and anticipates mass production in the first half of this year.
Executive Vice President of Memory Product Planning at Samsung Electronics stated,
“The industry’s AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need,” adding, “This new memory solution forms part of our drive toward developing core technologies for high-stack HBM and providing technological leadership for the high-capacity HBM market in the AI era.”
